百度作业网求一篇关于脉搏测量仪相关的中英文翻译文献。传感器的也行。谢谢、
来源：学生作业帮 编辑：百度作业网作业帮 分类：综合作业 时间：2024/04/29 04:19:58
求一篇关于脉搏测量仪相关的中英文翻译文献。传感器的也行。谢谢、
Organic thin film transistors (OTFTs) made of organic or polymeric materials have been developed for applications such as electronic paper and radio frequency identification
(RFID) tags due to their ability to be fabricated over a large area such as a flexible plastic printed circuit board. Unfortunately, the carrier mobility of OTFTs is inferior to the performance
levels of existing inorganic materials such as silicon based FETs. This is due to the OTFT’s conduction mechanism and the large number of traps at the boundary between the semiconductor and the gate dielectric. To increase the mobility of OTFTs to practical levels, transient response measurements and pulsed bias measurements are essential to understand the carrier transportation mechanisms in detail. In addition, it is also necessary to characterize the OTFT’s DC current versus voltage (IV) and capacitance versus voltage (CV) characteristics. A transient response measurement in which current is measured at very short
intervals while applying a step voltage is useful to investigate carrier conduction mechanisms and mobility degradation due to trapped charge at the boundary defect. These measurements can be very complicated and may involve fast and large current changes at a step voltage rising edge and a small but relatively slow current change during the falling edge of a step voltage. Also, to understand the IV characteristics in practical situations, such as RF rectifier circuits using OTFTs or logic circuits driven by clock pulses, transient and pulsed IV
measurements are necessary. Until now, transient or pulsed measurement solutions have
consisted of user-configured instrument setups, usually consisting of a pulse or function generator, a current to voltage convertor, and an oscilloscope (or voltage sampler). However, these measurement solutions have difficulty producing stable and consistent measurement
results. This is mostly due to poorly calibrated components or to the lack of calibration of the entire system. In addition, such measurement solutions constructed from multiple instruments can easily generate measurement errors due to their complicated cabling and the overall
error arising from the cumulative errors of the individual instrument components. Therefore, in order to acquire consistent data, an off-theshelf, self-contained solution with guaranteed specifications is highly desirable.
The B1530A Waveform Generator / Fast Measurement Unit (WGFMU) is an available module for the B1500A Semiconductor Device Analyzer and it can evaluate the pulsed or transient IV characteristics of OTFTs. The WGFMU module can measure current or voltage at sampling rates up to 200 Ms/s and it has up to 16 MHz of bandwidth response. When generating a waveform using its arbitrary linear waveform generator function, the WGFMU module can synthesize waveforms with 10 ns resolution. These features enable the WGFMU to measure the pulsed response of OTFTs in a range that spans down to hundreds of nanoseconds without any additional measurement instruments.
(RFID) tags due to their ability to be fabricated over a large area such as a flexible plastic printed circuit board. Unfortunately, the carrier mobility of OTFTs is inferior to the performance
levels of existing inorganic materials such as silicon based FETs. This is due to the OTFT’s conduction mechanism and the large number of traps at the boundary between the semiconductor and the gate dielectric. To increase the mobility of OTFTs to practical levels, transient response measurements and pulsed bias measurements are essential to understand the carrier transportation mechanisms in detail. In addition, it is also necessary to characterize the OTFT’s DC current versus voltage (IV) and capacitance versus voltage (CV) characteristics. A transient response measurement in which current is measured at very short
intervals while applying a step voltage is useful to investigate carrier conduction mechanisms and mobility degradation due to trapped charge at the boundary defect. These measurements can be very complicated and may involve fast and large current changes at a step voltage rising edge and a small but relatively slow current change during the falling edge of a step voltage. Also, to understand the IV characteristics in practical situations, such as RF rectifier circuits using OTFTs or logic circuits driven by clock pulses, transient and pulsed IV
measurements are necessary. Until now, transient or pulsed measurement solutions have
consisted of user-configured instrument setups, usually consisting of a pulse or function generator, a current to voltage convertor, and an oscilloscope (or voltage sampler). However, these measurement solutions have difficulty producing stable and consistent measurement
results. This is mostly due to poorly calibrated components or to the lack of calibration of the entire system. In addition, such measurement solutions constructed from multiple instruments can easily generate measurement errors due to their complicated cabling and the overall
error arising from the cumulative errors of the individual instrument components. Therefore, in order to acquire consistent data, an off-theshelf, self-contained solution with guaranteed specifications is highly desirable.
The B1530A Waveform Generator / Fast Measurement Unit (WGFMU) is an available module for the B1500A Semiconductor Device Analyzer and it can evaluate the pulsed or transient IV characteristics of OTFTs. The WGFMU module can measure current or voltage at sampling rates up to 200 Ms/s and it has up to 16 MHz of bandwidth response. When generating a waveform using its arbitrary linear waveform generator function, the WGFMU module can synthesize waveforms with 10 ns resolution. These features enable the WGFMU to measure the pulsed response of OTFTs in a range that spans down to hundreds of nanoseconds without any additional measurement instruments.