英语翻译2(a) exhibits that there is not only row spacingbut also

英语翻译
2(a) exhibits that there is not only row spacingbut also file spacing as farmland’s crops.Why is there space without growing substance during thegrowth process of SiO2 nanowires?In earlier paper,we reported that in order to remain thermodynamicbalance during the growth process multiple hollow fibres accumulated together and multicoreformed.For this reason,when large quantities of SiO2 nanowires are growing in order toremain thermodynamic balance,the growth process must provide effective heat dissipation.In thiscontext,there is sufficient space around some SiO2 nanowires,so that heat transfers effectively,thus fig.2(a) shows that the growth substance is gained.Fig.4(a) is X-ray-induced isothermal luminescent emission three-dimensional plot of SiO2nanowires at a low temperature (25\x02240 K).Two broad peaks correspond to emission features at430 and 570 nm,similar to what Halperin reported for bulk SiOx materials,but shifts slightly to392 SCIENCE IN CHINA (Series B) Vol.45longer wavelengths.

2(a) exhibits that there is not only row spacing but also file spacing as farmland’s crops.
2(a)显示,农田的庄稼不仅有横向间距,也有纵向间距.
Why is there space without growing substance during the growth process of SiO2 nanowires?
在SiO2纳米线的生成过程中,为什么会有不生成任何物质的空间?
In earlier paper,we reported that in order to remain thermodynamic balance during the growth process multiple hollow fibres accumulated together and multi-core formed.
在之前的论文中,我们报道过：为在生成过程中保持热平衡,积聚了多个中空纤维并形成了多个芯.
For this reason,when large quantities of SiO2 nanowires are growing in order to remain thermodynamic balance,the growth process must provide effective heat dissipation.
为此,为了保持平衡而生成大量SiO2纳米线时,生成过程须提供有效散热.
In this context,there is sufficient space around some SiO2 nanowires,so that heat transfers effectively,thus fig.2(a) shows that the growth substance is gained.
在这种情况下,有些SiO2纳米线周围有足够的空间以便热可以有效传输,这样就获得了生长素/助长剂,如图2(a)所示.
Fig.4(a) is X-ray-induced isothermal luminescent emission three-dimensional plot of SiO2 nanowires at a low temperature (25 240 K).
图4(a)是低温时(25 240K) SiO2纳米线的X射线诱导的等温发光放射三维图.
Two broad peaks correspond to emission features at 430 and 570 nm,similar to what Halperin reported for bulk SiOx materials,but shifts slightly to 392 SCIENCE IN CHINA (Series B) Vol.45 longer wavelengths.
这两个宽峰与430和570 nm时的放射特征相符,与Halperin所报道的大量SiOx (氧化硅)材料类似,但稍微偏移至较长的波长.（《中国科学(B辑) 第45卷》第392页）.【最后一句似乎有点乱】